to-92 plastic-encapsulate transistors ss8050 transistor ( npn ) features power dissipation p cm : 1 w (t a =25 . ) : 2 w (t c =25 . ) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 1.5 a t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =100ua, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 a emitter cut-off current i ceo v ce =20v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =1v, i c =100ma 85 400 dc current gain h fe(2) v ce =1v, i c =800ma 40 collector-emitter saturation voltage v ce(sat) i c =800ma, i b =80ma 0.5 v base-emitter saturation voltage v be(sat) i c =800ma, i b =80ma 1.2 v base-emitter voltage v be v ce =1v, i c =10ma 1 v transition frequency f t v ce =10v, i c =50ma,f=30mh z 100 mhz classification of h fe(1) rank b c d d3 range 85-160 120-200 160-300 300-400 to-92 1. emitter 2. base 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2012
0.2 0.4 0.6 0.8 1.0 1.2 1 10 100 1000 10 100 1 10 100 1000 0 25 50 75 100 125 150 0 200 400 600 800 1000 1200 1 10 100 1000 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 1 10 100 1000 1 10 100 1000 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 0 20 40 60 80 100 120 140 1 10 100 1000 1 10 100 1000 300 30 3 2 1500 common emitter v ce =1v collcetor current i c (ma) base-emmiter voltage v be (v) i c v be ?? t a =100 t a =25 i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a ss8050 collector current i c (ma) base-emitter saturation voltage v besat (v) i c v besat ?? =10 t a =100 t a =25 1500 c ob c ib capacitance c (pf) reverse voltage v (v) v cb / v eb c ob / c ib ?? f=1mhz i e =0/i c =0 t a =25 20 300 30 3 300 30 3 3 30 300 300 30 3 30 300 common emitter v ce =1v dc current gain h fe collector current i c (ma) t a =100 t a =25 i c h fe ?? 1500 common emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic 3 0.3 =10 t a =100 t a =25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? 1500 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,feb,2012
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